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CND2047
10GHz Frequency Divider by 4 Fixed Modulus Prescaler
GaAs Monolithic Microwave IC Description
The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7m self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50 load. The CND2047 is available in chip form and in 2 packages form: * low cost SOIC8 plastic package * 8 lead Flat Pack ceramic surface mount package
2047
FTP8 ceramic package
Main Features
| Very broad operating frequency range | Low power dissipation: 300mW | Single supply operation: 3V to 5V | High input sensitivity: -10dBm@8 Ghz at 25C and -5dBm@8Ghz at 125C | Low phase noise: -139dBc/Hz at 1KHz
SOIC8 plastic package
Main Characteristics
Tamb= +25C Symbol Vdd Pdiss Fmax Drain voltage Power dissipation Maximum input frequency FTP8 SOIC8 Parameter Min 3 120 9 8 Typ 5 300 10 9 Max 6 400 Unit V mW GHz
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCND20470077 -17-Mar-00 1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CND2047
10GHz Frequency Divider by 4
Electrical Characteristics in FTP8 Ceramic Package and in die form
Guaranteed electrical specifications over the temperature range of -55C to +125C but tested at Tamb=25C under configuration described in Fig.1 ( Vdd=5V ; Differential inputs; Pin=0dBm ; Zo=50 ) Symbol Fmax Idd Parameter Maximum input frequency Supply current Min 8.25 Typ 8.75 60 75 Max Unit GHz mA
Typical design information over the temperature range of -55C to +125C ( Vdd=5V, Zo=50 ) Symbol Fmax Parameter Maximum input frequency differential input Pin= -5dBm Pin= 0dBm one input Pin= -5dBm Pin= 0dBm Pout Idd Output power Supply current 8 8.25 7.5 8 -4 8.5 8.75 8 8.5 -1.5 60 75 GHz Ghz Ghz Ghz dBm mA Min Typ Max Unit
Typical design information over the temperature range of -55C to +125C. ( Vdd=3.3V, Zo=50 ) Symbol Fmax Parameter Maximum input frequency differential input Pin= -5dBm Pin= 0dBm one input Pin= -5dBm Pin= 0dBm Pout Idd Output power Supply current 7.5 8 7 7.5 -7 8 8.5 7.5 8 -4.5 40 55 GHz Ghz Ghz Ghz dBm mA Min Typ Max Unit
Ref. : DSCND20470077 -17-Mar-00
2/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10GHz Frequency Divider by 4
Electrical Characteristics in SOIC8 package
CND2047
Guaranteed electrical specifications over the temperature range of -40C to +85C but tested at Tamb=25C under configuration described in Fig.1 ( Vdd=5V ; Differential inputs; Pin=0dBm ; Zo=50 ) Symbol Fmax Idd Parameter Maximum input frequency Supply current Min 8.5 Typ 9 60 75 Max Unit GHz mA
Typical design information over the temperature range of -40C to +85C ( Vdd=5V, Zo=50 ) Symbol Fmax Parameter Maximum input frequency differential input Pin= -5dBm Pin= 0dBm one input Pin= -5dBm Pin= 0dBm Pout Idd Output power Supply current 8 8.5 7.25 7.75 -4 8.5 9 7.75 8.25 -1.5 60 75 GHz Ghz Ghz Ghz dBm mA Min Typ Max Unit
Typical design information over the temperature range of -40C to +85C. ( Vdd=3.3V, Zo=50 ) Symbol Fmax Parameter Maximum input frequency differential input Pin= -5dBm Pin= 0dBm one input Pin= -5dBm Pin= 0dBm Pout Idd Output power Supply current 7 7.5 6.5 6.75 -7 7.5 8 7 7.25 -4.5 40 55 GHz Ghz Ghz Ghz dBm mA Min Typ Max Unit
Ref. : DSCND20470077 -17-Mar-00
3/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CND2047
Absolute Maximum Ratings (1)
Tamb= 25C Symbol Vdd Pin Top Drain voltage Maximum input power Operating temperature range Parameter
10GHz Frequency Divider by 4
Values 7 15 SOIC8 -40 to +85 -55 to +125 -65 to +175
Units V dBm C
Die form / FTP8 Tstg Storage temperature range
C
(1) Operation of this device above anyone of these parameters may cause permanent damage
Ref. : DSCND20470077 -17-Mar-00
4/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10GHz Frequency Divider by 4
Typical Characteristics
Tamb= 25C, Zo=50, Vdd=5V
Output power level vs Input frequency and Vdd 2 0 Output level (dBm) -2
CND2047
Vdd=5V
-4 -6 -8 -10 1 3 5 7 Frequency (GHz) 9 11
Vdd=3.3V
Device current vs Voltage and Temperature 80 70 60 Idd (mA) 50 40 30 20 10 0 2,5 3 3,5 4 4,5 Vdd (V) 5 5,5 6 25C -55C 125C
SSB phase noise vs. Offset frequency (Fin=3.9 Ghz) 0 SSB phase noise (dBc/Hz) -20 -40 -60 -80 -100 -120 -140 -160 10 100 1000 Offset frequency (Hz) 10000 100000
Ref. : DSCND20470077 -17-Mar-00
5/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CND2047
10GHz Frequency Divider by 4
Fmax vs Vdd (Pin=0dBm; differential inputs) 12 10 Frequency (GHz) 8 6 4 2 0 2 2,5 3 3,5 4 Vdd (Volts) 4,5 5 5,5 6 SOIC8 FTP8
FTP8 package / Die form
Input sensitivity vs. Input frequency and temperature (Vdd=5V; differential inputs) 15 5 Input level (dBm) -5
+25C
-15
+125C
-25
-55C
-35 -45 -55 1,00
3,00
5,00
7,00
9,00
11,00
Frequency (GHz)
SOIC8 package
Input sensitivity vs. Input frequency and temperature (Vdd=5V; differential inputs) 15,00 5,00 Input level (dBm) -5,00 -15,00 -25,00 -35,00 -45,00 -55,00 1,00
+80 +25 -40
3,00
5,00
7,00
9,00
11,00
Frequency (GHz)
Ref. : DSCND20470077 -17-Mar-00
6/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10GHz Frequency Divider by 4
Typical bias tuning
Tamb=25C
Vdd
CND2047
1
1 nF Signal generator 50 Ohms load Tansmission lines are 50 Ohms 0 1 nF
8
1 nF Spectrum analyzer 50 Ohms load
1 nF
180
4
Fig.1 : Typical measurement and RF biasing configuration (differential inputs)
Vdd
1
Signal generator 50 Ohms load Tansmission lines are 50 Ohms
1 nF
8
5
1 nF
Q F/4 RF output (50 Ohms) QB F/4 RF output (50 Ohms)
1 nF
Fig.2 : RF biasing configuration with single input
Fig.3 : Chip block diagram
Ref. : DSCND20470077 -17-Mar-00 7/10 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
4
5
CND2047
SOIC8 Mechanical Data
5+/-0.15 [20+/-0.006] 3.81 [.15] 1.27 [0.05]
10GHz Frequency Divider by 4
0.2 [0.006]
8
5
6+/-0,15 (,236+/-,006)
0.1+/-0.15 3,7 (1,45) [.004+/-.006] 1.4 [0.055]
1
0.4 [.015]
4
8 max unite: mm Unit: [In] Tolerance generale: +/-0.05 [general tolerance: +/-.002]
1.7 max
Pin out 1 2 3 4 5 6 7 8
Signal Vdd CK CKB Ground Ground QB Q Vdd
Ref. : DSCND20470077 -17-Mar-00
8/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10GHz Frequency Divider by 4
FTP8 Mechanical Data
3,81 1,27 typ.
CND2047
8
5
0,127 max
9,56 - 10,16 4,6 max
2047
Da tecode 1 4 1,00 - 1,77 2,00 m ax 0,127 0,02 0,38 4,6 ma x Unite: mm
Pin out 1 2 3 4 5 6 7 8
Signal Vdd CK CKB Ground Ground QB Q Vdd
Ref. : DSCND20470077 -17-Mar-00
9/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CND2047
Chip Mechanical Data
10GHz Frequency Divider by 4
Vdd
CKB
CK
Vdd
Recommended die attach Epoxy die attach is recommended. Minimum quantity of electrically conductive epoxy must be used, with a narrow fillet around the die after contact Recommended bonding Bonding pads of the product are covered with aluminium metallic layer. Wedge or ball bonding can be used. Aluminium wire has be used if the assembly process is up to 250C. Otherwise the use of gold wire is possible. The ground bounding length should be as short as possible to optimize the use of the product. The bonder should be properly grounded. Note 1: Vdd1 is used to connect the output buffers (on Q/QB) and can be applied separately from Vdd.
GND
GND
GND
QB
UMS
7151
Q
Vdd1
dimensions in m : 1050 (+10 /-100) * 900 (+10 /-100) Thickness= 300m 20m Pads area: 100*100m
Ordering Information
Chip form FTP8 Package SOIC8 Package :CND2047-99F/00 :CND2047-SNF/23 :CND2047-DAF/20
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCND20470077 -17-Mar-00 10/10 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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